Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures

Abstract In this paper, we investigate the electrical evolution of tungsten (W) and carbide (WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing temperatures from 475 °C 700 °C. For each temperature, uniformity barrier height (Φ B ) ideality factor ( n was monitored by current–voltage I – V measurements in forward bias, performed over sets equivalent diodes. Good values (below 1.05) were found for both up On other hand, two behaves differently. W/4H-SiC diode, Φ increases with temperature (from 1.14 eV 1.25 °C), whereas WC/4H-SiC features a slight reduction already °C, remaining almost constant around 1.06 A deeper characterization °C-annealed studying temperature-dependence parameters current–voltage–temperature T characterization. The behaviour indicates presence nanoscale lateral inhomogeneity contacts, which can be described Tung’s model. Finally, reverse characteristics could thermionic field emission model, accounting dependent determined